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This is manufactured by onsemi. The manufacturer part number is 2SD1145G-AE. The maximum collector current includes 5 a. It is assigned with possible HTSUS value of 8541.21.0075. The product is not applicable. The maximum collector emitter breakdown voltage of the product is 20 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 long body. Furthermore, 280 @ 500ma, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 120mhz. In addition, it is vendor undefined. The transistor is a npn type. The 500mv @ 60ma, 3a is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 1µa (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. 3-mp is the supplier device package value. In addition, bulk is the available packaging type of the product. The maximum power of the product is 900 mw. The product is designated with the ear99 code number.
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