Toshiba Semiconductor and Storage 2SC5819(TE12L,ZF)

Enrgtech Part No: ET22603408
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Manufacturer Part No:
2SC5819(TE12L,ZF)
|
Manufacturer: Toshiba Semiconductor and Storage

2SC5819-TE12L-ZF- Toshiba Semiconductor and Storage 2SC5819(TE12L,ZF)

Product Information

Current - Collector (Ic) (Max):

1.5 A

HTSUS:

8541.29.0095

Operating Temperature:

150°C (TJ)

Package / Case:

TO-243AA

DC Current Gain (hFE) (Min) @ Ic, Vce:

400 @ 150mA, 2V

Frequency - Transition:

Vce Saturation (Max) @ Ib, Ic:

120mV @ 10mA, 500mA

Voltage - Collector Emitter Breakdown (Max):

20 V

Transistor Type:

NPN

Package:

Box

Current - Collector Cutoff (Max):

100nA (ICBO)

Mounting Type:

Surface Mount

Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SC5819(TE12L,ZF). The maximum collector current includes 1.5 a. It is assigned with possible HTSUS value of 8541.29.0095. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-243aa. Furthermore, 400 @ 150ma, 2v is the minimum DC current gain at given voltage. The 120mv @ 10ma, 500ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 20 v. The transistor is a npn type. It is shipped in box package . In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. pw-mini is the supplier device package value. The maximum power of the product is 1 w. The product is designated with the ear99 code number.

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Toshiba Semiconductor and Storage 2SC5819(TE12L,ZF)

2SC5819(TE12L,ZF)

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