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The PHE13009/DG,127 from NXP USA Inc. is a high-performance NPN bipolar junction transistor (BJT) with exceptional power handling capabilities in a compact package. Its low saturation voltage and reliable performance enable efficient power amplification and control in various electronic applications.
The PHE13009/DG,127 is an NPN (Negative-Positive-Negative) bipolar junction transistor designed for high voltage and high current applications. It features a maximum voltage rating of 400 V, allowing it to handle substantial power requirements. The transistor can handle a continuous current of up to 12 A and dissipate power up to 80 W, making it suitable for demanding circuit designs. It is a reliable, high-performance electronic component ideal for many applications requiring high voltage and current handling capabilities.
The PHE13009/DG,127 transistor comes in a Through Hole TO-220AB package. This packaging style offers several advantages, including easy installation and excellent heat dissipation capabilities. The through-hole design enables secure mounting on printed circuit boards (PCBs) and facilitates efficient soldering during assembly. The TO-220AB package also allows for convenient connection to external heat sinks, enabling efficient heat dissipation and enhanced thermal management.
The NXP PHE13009/DG,127 transistor finds applications in various electronic systems, particularly those requiring high voltage switching and amplification. It is commonly used in power supplies, motor control circuits, audio amplifiers, and lighting systems. The transistor's high voltage and current ratings and robust design make it suitable for demanding industrial and automotive applications.
Furthermore, the PHE13009/DG,127 transistor offers low saturation voltage, fast switching speeds, and high-power dissipation capabilities. These features contribute to efficient performance, improved circuit reliability, and enhanced system efficiency.
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