NXP USA Inc. PDTA143EMB,315

PDTA143EMB-315 NXP USA Inc. PDTA143EMB,315
NXP USA Inc.

Product Information

Current - Collector Cutoff (Max):
1µA
Transistor Type:
PNP - Pre-Biased
Mounting Type:
Surface Mount
HTSUS:
8541.21.0075
Vce Saturation (Max) @ Ib, Ic:
150mV @ 500µA, 10mA
Series:
-
Supplier Device Package:
DFN1006B-3
Voltage - Collector Emitter Breakdown (Max):
50 V
Packaging:
Bulk
Power - Max:
250 mW
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 10mA, 5V
Package / Case:
SC-101, SOT-883
Current - Collector (Ic) (Max):
100 mA
Manufacturer:
NXP USA Inc.
ECCN:
EAR99
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This is manufactured by NXP USA Inc.. The manufacturer part number is PDTA143EMB,315. In addition, 1µa is the maximum current at collector cutoff. The transistor is a pnp - pre-biased type. The product is available in surface mount configuration. It is assigned with possible HTSUS value of 8541.21.0075. The 150mv @ 500µa, 10ma is the maximum Vce saturation. dfn1006b-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50 v. In addition, bulk is the available packaging type of the product. The maximum power of the product is 250 mw. Furthermore, 30 @ 10ma, 5v is the minimum DC current gain at given voltage. Moreover, the product comes in sc-101, sot-883. The maximum collector current includes 100 ma. The nxp usa inc.'s product offers user-desired applications. The product is designated with the ear99 code number.

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