NXP USA Inc. PBSS4220V,115

PBSS4220V-115 NXP USA Inc. PBSS4220V,115
NXP USA Inc.

Product Information

Current - Collector (Ic) (Max):
2 A
HTSUS:
8541.21.0075
Operating Temperature:
150°C (TJ)
Package / Case:
SOT-563, SOT-666
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 1A, 2V
Frequency - Transition:
210MHz
Voltage - Collector Emitter Breakdown (Max):
20 V
Transistor Type:
NPN
Vce Saturation (Max) @ Ib, Ic:
350mV @ 200mA, 2A
Current - Collector Cutoff (Max):
100nA
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-666
Packaging:
Bulk
Power - Max:
900 mW
ECCN:
EAR99
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This is manufactured by NXP USA Inc.. The manufacturer part number is PBSS4220V,115. The maximum collector current includes 2 a. It is assigned with possible HTSUS value of 8541.21.0075. The product has 150°c (tj) operating temperature range. Moreover, the product comes in sot-563, sot-666. Furthermore, 200 @ 1a, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 210mhz. The maximum collector emitter breakdown voltage of the product is 20 v. The transistor is a npn type. The 350mv @ 200ma, 2a is the maximum Vce saturation. In addition, 100na is the maximum current at collector cutoff. The product is available in surface mount configuration. sot-666 is the supplier device package value. In addition, bulk is the available packaging type of the product. The maximum power of the product is 900 mw. The product is designated with the ear99 code number.

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