NXP USA Inc. 2PB709ASW,115

2PB709ASW-115 NXP USA Inc. 2PB709ASW,115
2PB709ASW,115
NXP USA Inc.

Product Information

Current - Collector (Ic) (Max):
100 mA
HTSUS:
8541.21.0095
Operating Temperature:
150°C (TJ)
Package / Case:
SC-70, SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce:
290 @ 2mA, 10V
Frequency - Transition:
80MHz
Vce Saturation (Max) @ Ib, Ic:
500mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max):
45 V
Transistor Type:
PNP
Package:
Bulk
Qualification:
AEC-Q101
Current - Collector Cutoff (Max):
10nA (ICBO)
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Supplier Device Package:
SOT-323
Power - Max:
200 mW
ECCN:
EAR99
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This is manufactured by NXP USA Inc.. The manufacturer part number is 2PB709ASW,115. The maximum collector current includes 100 ma. It is assigned with possible HTSUS value of 8541.21.0095. The product has 150°c (tj) operating temperature range. Moreover, the product comes in sc-70, sot-323. Furthermore, 290 @ 2ma, 10v is the minimum DC current gain at given voltage. The transition frequency of the product is 80mhz. The 500mv @ 10ma, 100ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 45 v. The transistor is a pnp type. It is shipped in bulk package . In addition, 10na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. The product is automotive, a grade of class. sot-323 is the supplier device package value. The maximum power of the product is 200 mw. The product is designated with the ear99 code number.

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