NXP Semiconductors PMBTA14,215

PMBTA14-215 NXP Semiconductors PMBTA14,215
NXP Semiconductors

Product Information

Current - Collector (Ic) (Max):
500 mA
Voltage - Collector Emitter Breakdown (Max):
30 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
20000 @ 100mA, 5V
Frequency - Transition:
125MHz
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 100µA, 100mA
REACH Status:
REACH Unaffected
Transistor Type:
NPN - Darlington
Package:
Bulk
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Qualification:
AEC-Q101
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Supplier Device Package:
TO-236AB
Power - Max:
250 mW
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This is manufactured by NXP Semiconductors. The manufacturer part number is PMBTA14,215. The maximum collector current includes 500 ma. The maximum collector emitter breakdown voltage of the product is 30 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Furthermore, 20000 @ 100ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 125mhz. The 1.5v @ 100µa, 100ma is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a npn - darlington type. It is shipped in bulk package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. The product is automotive, a grade of class. to-236ab is the supplier device package value. The maximum power of the product is 250 mw.

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PMBTA14,215 Datasheet(Datasheets)

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