NXP Semiconductors PBSS5630PA,115

PBSS5630PA-115 NXP Semiconductors PBSS5630PA,115
NXP Semiconductors

Product Information

Current - Collector (Ic) (Max):
6 A
Voltage - Collector Emitter Breakdown (Max):
30 V
Operating Temperature:
150°C (TJ)
Package / Case:
3-PowerUDFN
DC Current Gain (hFE) (Min) @ Ic, Vce:
190 @ 2A, 2V
Frequency - Transition:
80MHz
Vce Saturation (Max) @ Ib, Ic:
350mV @ 300mA, 6A
REACH Status:
REACH Unaffected
Transistor Type:
PNP
Package:
Bulk
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
100nA
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
3-HUSON (2x2)
Power - Max:
2.1 W
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This is manufactured by NXP Semiconductors. The manufacturer part number is PBSS5630PA,115. The maximum collector current includes 6 a. The maximum collector emitter breakdown voltage of the product is 30 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 3-powerudfn. Furthermore, 190 @ 2a, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 80mhz. The 350mv @ 300ma, 6a is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a pnp type. It is shipped in bulk package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na is the maximum current at collector cutoff. The product is available in surface mount configuration. 3-huson (2x2) is the supplier device package value. The maximum power of the product is 2.1 w.

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