NXP Semiconductors PBSS5350D,115

NXP Semiconductors

Product Information

Current - Collector (Ic) (Max):
3 A
Voltage - Collector Emitter Breakdown (Max):
50 V
Operating Temperature:
150°C (TJ)
Package / Case:
SC-74, SOT-457
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 2A, 2V
Frequency - Transition:
100MHz
Vce Saturation (Max) @ Ib, Ic:
300mV @ 200mA, 2A
REACH Status:
REACH Unaffected
Transistor Type:
PNP
Package:
Bulk
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
6-TSOP
Power - Max:
750 mW
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This is manufactured by NXP Semiconductors. The manufacturer part number is PBSS5350D,115. The maximum collector current includes 3 a. The maximum collector emitter breakdown voltage of the product is 50 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in sc-74, sot-457. Furthermore, 100 @ 2a, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 100mhz. The 300mv @ 200ma, 2a is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a pnp type. It is shipped in bulk package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. 6-tsop is the supplier device package value. The maximum power of the product is 750 mw.

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