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This is manufactured by NXP Semiconductors. The manufacturer part number is PBSS5230PAP,115. The maximum collector current includes 2a. The maximum collector emitter breakdown voltage of the product is 30v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 6-udfn exposed pad. Furthermore, 260 @ 100ma, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 95mhz. In addition, it is reach unaffected. The nxp semiconductors's product offers user-desired applications. The transistor is a 2 pnp type. The 390mv @ 200ma, 2a is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. The product is automotive, a grade of class. 6-huson (2x2) is the supplier device package value. In addition, bulk is the available packaging type of the product. The maximum power of the product is 370mw.
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