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This is manufactured by NXP Semiconductors. The manufacturer part number is PBSS5112PAP,115. The maximum collector current includes 1a. The maximum collector emitter breakdown voltage of the product is 120v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 6-udfn exposed pad. Furthermore, 190 @ 100ma, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 100mhz. The 480mv @ 100ma, 1a is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a 2 pnp type. It is shipped in bulk package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. The product is automotive, a grade of class. 6-huson (2x2) is the supplier device package value. The maximum power of the product is 510mw.
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