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This is manufactured by NXP Semiconductors. The manufacturer part number is PBSS4230QAZ. The maximum collector current includes 2 a. It is assigned with possible HTSUS value of 8541.29.0075. The maximum collector emitter breakdown voltage of the product is 30 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 3-xdfn exposed pad. Furthermore, 100 @ 2a, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 190mhz. In addition, it is reach unaffected. The transistor is a npn type. The 190mv @ 50ma, 1a is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. dfn1010d-3 is the supplier device package value. In addition, bulk is the available packaging type of the product. The maximum power of the product is 325 mw. The product is designated with the ear99 code number.
For more information please check the datasheets.
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