NXP Semiconductors PBSS4220V,115

PBSS4220V-115 NXP Semiconductors PBSS4220V,115
NXP Semiconductors

Product Information

Current - Collector (Ic) (Max):
2 A
HTSUS:
8541.21.0075
Voltage - Collector Emitter Breakdown (Max):
20 V
Operating Temperature:
150°C (TJ)
Package / Case:
SOT-563, SOT-666
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 1A, 2V
Frequency - Transition:
210MHz
title:
PBSS4220V,115
REACH Status:
REACH Unaffected
Transistor Type:
NPN
Vce Saturation (Max) @ Ib, Ic:
350mV @ 200mA, 2A
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
100nA
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-666
Packaging:
Bulk
Power - Max:
900 mW
ECCN:
EAR99
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This is manufactured by NXP Semiconductors. The manufacturer part number is PBSS4220V,115. The maximum collector current includes 2 a. It is assigned with possible HTSUS value of 8541.21.0075. The maximum collector emitter breakdown voltage of the product is 20 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in sot-563, sot-666. Furthermore, 200 @ 1a, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 210mhz. In addition, it is reach unaffected. The transistor is a npn type. The 350mv @ 200ma, 2a is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na is the maximum current at collector cutoff. The product is available in surface mount configuration. sot-666 is the supplier device package value. In addition, bulk is the available packaging type of the product. The maximum power of the product is 900 mw. The product is designated with the ear99 code number.

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