NXP Semiconductors BSR16/DG/B4215

BSR16-DG-B4215 NXP Semiconductors BSR16/DG/B4215
NXP Semiconductors

Product Information

Current - Collector (Ic) (Max):
600 mA
Voltage - Collector Emitter Breakdown (Max):
60 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 150mA, 10V
Frequency - Transition:
200MHz
Vce Saturation (Max) @ Ib, Ic:
1.6V @ 50mA, 500mA
REACH Status:
REACH Unaffected
Transistor Type:
PNP
Package:
Bulk
Moisture Sensitivity Level (MSL):
Vendor Undefined
Qualification:
AEC-Q101
Current - Collector Cutoff (Max):
10nA (ICBO)
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Supplier Device Package:
SOT-23-3 (TO-236)
Power - Max:
250 mW
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This is manufactured by NXP Semiconductors. The manufacturer part number is BSR16/DG/B4215. The maximum collector current includes 600 ma. The maximum collector emitter breakdown voltage of the product is 60 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Furthermore, 100 @ 150ma, 10v is the minimum DC current gain at given voltage. The transition frequency of the product is 200mhz. The 1.6v @ 50ma, 500ma is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a pnp type. It is shipped in bulk package . Its typical moisture sensitivity level is vendor undefined. In addition, 10na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. The product is automotive, a grade of class. sot-23-3 (to-236) is the supplier device package value. The maximum power of the product is 250 mw.

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