NXP Semiconductors BC859CW,135

BC859CW-135 NXP Semiconductors BC859CW,135
NXP Semiconductors

Product Information

Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
30 V
Operating Temperature:
150°C (TJ)
Package / Case:
SC-70, SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce:
420 @ 2mA, 5V
Frequency - Transition:
100MHz
REACH Status:
REACH Unaffected
Transistor Type:
PNP
Vce Saturation (Max) @ Ib, Ic:
650mV @ 5mA, 100mA
Moisture Sensitivity Level (MSL):
Vendor Undefined
Qualification:
AEC-Q101
Current - Collector Cutoff (Max):
15nA (ICBO)
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Supplier Device Package:
SOT-323
Packaging:
Bulk
Power - Max:
200 mW
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This is manufactured by NXP Semiconductors. The manufacturer part number is BC859CW,135. The maximum collector current includes 100 ma. The maximum collector emitter breakdown voltage of the product is 30 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in sc-70, sot-323. Furthermore, 420 @ 2ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 100mhz. In addition, it is reach unaffected. The transistor is a pnp type. The 650mv @ 5ma, 100ma is the maximum Vce saturation. Its typical moisture sensitivity level is vendor undefined. In addition, 15na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. The product is automotive, a grade of class. sot-323 is the supplier device package value. In addition, bulk is the available packaging type of the product. The maximum power of the product is 200 mw.

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