NXP Semiconductors BC859B,215

BC859B-215 NXP Semiconductors BC859B,215
NXP Semiconductors

Product Information

Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
30 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
220 @ 2mA, 5V
Frequency - Transition:
100MHz
REACH Status:
REACH Unaffected
Transistor Type:
PNP
Vce Saturation (Max) @ Ib, Ic:
650mV @ 5mA, 100mA
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Qualification:
AEC-Q101
Current - Collector Cutoff (Max):
15nA (ICBO)
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Supplier Device Package:
TO-236AB
Packaging:
Bulk
Power - Max:
250 mW
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This is manufactured by NXP Semiconductors. The manufacturer part number is BC859B,215. The maximum collector current includes 100 ma. The maximum collector emitter breakdown voltage of the product is 30 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Furthermore, 220 @ 2ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 100mhz. In addition, it is reach unaffected. The transistor is a pnp type. The 650mv @ 5ma, 100ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 15na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. The product is automotive, a grade of class. to-236ab is the supplier device package value. In addition, bulk is the available packaging type of the product. The maximum power of the product is 250 mw.

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BC860B,235 Datasheet(Datasheets)

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