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This is manufactured by NXP Semiconductors. The manufacturer part number is BC857BQAZ. The maximum collector current includes 100 ma. It is assigned with possible HTSUS value of 8541.21.0075. The maximum collector emitter breakdown voltage of the product is 45 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 3-xdfn exposed pad. Furthermore, 220 @ 2ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 100mhz. The 400mv @ 5ma, 100ma is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a pnp type. It is shipped in bulk package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 15na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. The product is automotive, a grade of class. dfn1010d-3 is the supplier device package value. The maximum power of the product is 280 mw. Moreover, it corresponds to bc857, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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