NXP Semiconductors BC55-10PA,115

BC55-10PA-115 NXP Semiconductors BC55-10PA,115
NXP Semiconductors

Product Information

Current - Collector (Ic) (Max):
1 A
Voltage - Collector Emitter Breakdown (Max):
60 V
Operating Temperature:
150°C (TJ)
Package / Case:
3-PowerUDFN
DC Current Gain (hFE) (Min) @ Ic, Vce:
63 @ 150mA, 2V
Frequency - Transition:
180MHz
Vce Saturation (Max) @ Ib, Ic:
500mV @ 50mA, 500mA
REACH Status:
REACH Unaffected
Transistor Type:
NPN
Package:
Bulk
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
3-HUSON (2x2)
Power - Max:
650 mW
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This is manufactured by NXP Semiconductors. The manufacturer part number is BC55-10PA,115. The maximum collector current includes 1 a. The maximum collector emitter breakdown voltage of the product is 60 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 3-powerudfn. Furthermore, 63 @ 150ma, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 180mhz. The 500mv @ 50ma, 500ma is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a npn type. It is shipped in bulk package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. 3-huson (2x2) is the supplier device package value. The maximum power of the product is 650 mw.

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BC55-10PA,115 Datasheet(Datasheets)

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