Toshiba Semiconductor and Storage 2SA1162-GR,LXHF

2SA1162-GR-LXHF Toshiba Semiconductor and Storage 2SA1162-GR,LXHF
Toshiba Semiconductor and Storage

Product Information

Current - Collector (Ic) (Max):
150 mA
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
50 V
Operating Temperature:
125°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 2mA, 6V
Frequency - Transition:
80MHz
Vce Saturation (Max) @ Ib, Ic:
300mV @ 10mA, 100mA
REACH Status:
REACH Unaffected
Transistor Type:
PNP
Package:
Tape & Reel (TR)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Qualification:
AEC-Q101
standardLeadTime:
40 Weeks
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Supplier Device Package:
S-Mini
Power - Max:
200 mW
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SA1162-GR,LXHF. The maximum collector current includes 150 ma. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 50 v. The product has 125°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Furthermore, 200 @ 2ma, 6v is the minimum DC current gain at given voltage. The transition frequency of the product is 80mhz. The 300mv @ 10ma, 100ma is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a pnp type. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). It has a long 40 weeks standard lead time. In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. The product is automotive, a grade of class. s-mini is the supplier device package value. The maximum power of the product is 200 mw. The product is designated with the ear99 code number.

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