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This is manufactured by onsemi. The manufacturer part number is NSV20101JT1G. The maximum collector current includes 1 a. It is assigned with possible HTSUS value of 8541.21.0075. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 20 v. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sc-89, sot-490. Furthermore, 200 @ 100ma, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 350mhz. The 220mv @ 100ma, 1a is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a npn type. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. sc-89-3 is the supplier device package value. The maximum power of the product is 255 mw. Moreover, it corresponds to nsv20101, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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