onsemi SMMBT5089LT1G

Enrgtech Part No: ET21550873
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Manufacturer Part No:
SMMBT5089LT1G
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Manufacturer: onsemi

Product Information

The SMMBT5089LT1G by Onsemi is a high-geared NPN bipolar junction transistor (BJT) with reliable and efficient power amplification capabilities. Its low collector-emitter saturation voltage and compact size provide versatile performance in various electronic circuits and applications.

Current - Collector (Ic) (Max):

50 mA

HTSUS:

8541.21.0095

RoHS Status:

ROHS3 Compliant

Voltage - Collector Emitter Breakdown (Max):

25 V

Operating Temperature:

-55°C ~ 150°C (TJ)

Package / Case:

TO-236-3, SC-59, SOT-23-3

DC Current Gain (hFE) (Min) @ Ic, Vce:

400 @ 100µA, 5V

Frequency - Transition:

50MHz

REACH Status:

REACH Unaffected

edacadModel:

SMMBT5089LT1G Models

edacadModelUrl:

/en/models/3062762

Transistor Type:

NPN

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The ON Semiconductor SMMBT5089LT1G is a bipolar junction transistor (BJT) designed for various electronic applications. This NPN (negative-positive-negative) transistor offers a maximum voltage rating of 25 V and a current rating of 50 mA. With its small footprint and high-frequency capabilities, it is commonly used in low-power amplification and switching circuits. Its NPN configuration, voltage and current ratings, high-frequency capacity, and compact package make it suitable for various applications, including amplification, switching, oscillators, and wireless communication.

Package Type:

The SMMBT5089LT1G comes in a surface mount SOT-23-3 (TO-236) package. This small-outline transistor package features three pins, providing easy soldering and compatibility with automated assembly processes. The compact size of the SOT-23-3 package makes it suitable for space-constrained applications.

The Onsemi SMMBT5089LT1G: Key Specifications

Voltage Rating: The SMMBT5089LT1G has a maximum voltage rating of 25 V, making it suitable for low-voltage applications.
Current Rating: It can handle a maximum continuous current of 50 mA, allowing it to power a range of small electronic devices.
Frequency Response: The transistor offers a high-frequency capability of up to 50 MHz, enabling it to amplify signals within this range.
Power Dissipation: With a power dissipation rating of 300 mW, the transistor can safely handle heat generated during operation.

Application Versatility of onsemi SMMBT5089LT1G:

Amplification: The transistor's NPN configuration and moderate current and voltage ratings make it well-suited for amplifying low-power signals.
Switching: The SMMBT5089LT1G can be used as a switch in digital circuits thanks to its fast switching speed and low saturation voltage.
Oscillators: Its high-frequency capability makes it suitable for oscillators, allowing stable signal generation.
Wireless Communication: The transistor's characteristics make it suitable for RF circuits and wireless communication systems.

onsemi RoHS(Environmental Information)

Compound Qualification 23/Jun/2019(PCN Assembly/Origin)

Pd-Coated Cu Wire Update 23/Sep/2015(PCN Design/Specification)

SOT23 27/Sep/2016(PCN Design/Specification)

MMBT5088LT1, 5089LT1(Datasheets)

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FAQs

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You can order onsemi brand products with SMMBT5089LT1G directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.

Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.

You will get a confirmation email regarding your order of onsemi SMMBT5089LT1G. You can also check on our website or by contacting our customer support team for further order details on onsemi SMMBT5089LT1G.

We use our internationally recognized delivery partners UPS/DHL. Collection of ET21550873 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "onsemi" products on our website by using Enrgtech's Unique Manufacturing Part Number ET21550873.

Yes. We ship SMMBT5089LT1G Internationally to many countries around the world.