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This is manufactured by onsemi. The manufacturer part number is NSS35200MR6T1G. The maximum collector current includes 2 a. It is assigned with possible HTSUS value of 8541.21.0075. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 35 v. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sot-23-6 thin, tsot-23-6. Furthermore, 100 @ 1.5a, 1.5v is the minimum DC current gain at given voltage. The transition frequency of the product is 100mhz. The 310mv @ 20ma, 2a is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a pnp type. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na is the maximum current at collector cutoff. The product is available in surface mount configuration. 6-tsop is the supplier device package value. The maximum power of the product is 625 mw. Moreover, it corresponds to nss35200, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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