onsemi NSS35200CF8T1G

NSS35200CF8T1G onsemi
onsemi

Product Information

Current - Collector (Ic) (Max):
2 A
HTSUS:
8541.21.0075
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
35 V
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SMD, Flat Leads
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 1.5A, 2V
Frequency - Transition:
100MHz
title:
NSS35200CF8T1G
REACH Status:
REACH Unaffected
Transistor Type:
PNP
Vce Saturation (Max) @ Ib, Ic:
300mV @ 20mA, 2A
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
100nA
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
ChipFET™
Packaging:
Tape & Reel (TR)
Power - Max:
635 mW
Base Product Number:
NSS35200
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is NSS35200CF8T1G. The maximum collector current includes 2 a. It is assigned with possible HTSUS value of 8541.21.0075. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 35 v. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-smd, flat leads. Furthermore, 100 @ 1.5a, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 100mhz. In addition, it is reach unaffected. The transistor is a pnp type. The 300mv @ 20ma, 2a is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na is the maximum current at collector cutoff. The product is available in surface mount configuration. chipfet™ is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 635 mw. Moreover, it corresponds to nss35200, a base product number of the product. The product is designated with the ear99 code number.

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onsemi RoHS(Environmental Information)
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Copper Wire 20/Jul/2010(PCN Design/Specification)
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Mult Dev EOL 30/Jun/2023(PCN Obsolescence/ EOL)
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NSS35200CF8T1G(Datasheets)

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