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This is manufactured by onsemi. The manufacturer part number is NSS1C200MZ4T3G. The maximum collector current includes 2 a. It is assigned with possible HTSUS value of 8541.21.0075. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 100 v. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-261-4, to-261aa. Furthermore, 120 @ 500ma, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 120mhz. The 220mv @ 200ma, 2a is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a pnp type. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). It has a long 8 weeks standard lead time. In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. sot-223 (to-261) is the supplier device package value. The maximum power of the product is 800 mw. Moreover, it corresponds to nss1c200, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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