onsemi NSBA123EDXV6T1G

NSBA123EDXV6T1G onsemi
onsemi

Product Information

Resistor - Base (R1):
2.2kOhms
Current - Collector (Ic) (Max):
100mA
Voltage - Collector Emitter Breakdown (Max):
50V
Resistor - Emitter Base (R2):
2.2kOhms
Package / Case:
SOT-563, SOT-666
DC Current Gain (hFE) (Min) @ Ic, Vce:
8 @ 5mA, 10V
Frequency - Transition:
-
Vce Saturation (Max) @ Ib, Ic:
250mV @ 5mA, 10mA
REACH Status:
REACH Unaffected
Transistor Type:
2 PNP - Pre-Biased (Dual)
Package:
Bulk
Moisture Sensitivity Level (MSL):
Vendor Undefined
Current - Collector Cutoff (Max):
500nA
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-563
Power - Max:
500mW
Checking for live stock

This is manufactured by onsemi. The manufacturer part number is NSBA123EDXV6T1G. Resistor - Base - 2.2kohms. The maximum collector current includes 100ma. The maximum collector emitter breakdown voltage of the product is 50v. Resistor - Emittor Base (R2) - 2.2kohms. Moreover, the product comes in sot-563, sot-666. Furthermore, 8 @ 5ma, 10v is the minimum DC current gain at given voltage. The 250mv @ 5ma, 10ma is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a 2 pnp - pre-biased (dual) type. It is shipped in bulk package . Its typical moisture sensitivity level is vendor undefined. In addition, 500na is the maximum current at collector cutoff. The product is available in surface mount configuration. sot-563 is the supplier device package value. The maximum power of the product is 500mw.

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