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This is manufactured by onsemi. The manufacturer part number is MMJT350T1G. The maximum collector current includes 500 ma. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 300 v. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-261-4, to-261aa. Furthermore, 30 @ 50ma, 10v is the minimum DC current gain at given voltage. In addition, it is reach unaffected. The transistor is a pnp type. Its typical moisture sensitivity level is 1 (unlimited). It has a long 11 weeks standard lead time. In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. sot-223 (to-261) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 650 mw. Moreover, it corresponds to mmjt350, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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