onsemi MMBT6589T1G

MMBT6589T1G onsemi
onsemi

Product Information

Current - Collector (Ic) (Max):
1 A
HTSUS:
8541.21.0075
Voltage - Collector Emitter Breakdown (Max):
30 V
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-23-6 Thin, TSOT-23-6
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 500mA, 2V
Frequency - Transition:
100MHz
REACH Status:
REACH Unaffected
edacadModel:
MMBT6589T1G Models
edacadModelUrl:
/en/models/1481962
Transistor Type:
PNP
Vce Saturation (Max) @ Ib, Ic:
650mV @ 200mA, 2A
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
100nA
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
6-TSOP
Packaging:
Tape & Reel (TR)
Power - Max:
540 mW
Base Product Number:
MMBT6589
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is MMBT6589T1G. The maximum collector current includes 1 a. It is assigned with possible HTSUS value of 8541.21.0075. The maximum collector emitter breakdown voltage of the product is 30 v. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sot-23-6 thin, tsot-23-6. Furthermore, 100 @ 500ma, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 100mhz. In addition, it is reach unaffected. The transistor is a pnp type. The 650mv @ 200ma, 2a is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na is the maximum current at collector cutoff. The product is available in surface mount configuration. 6-tsop is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 540 mw. Moreover, it corresponds to mmbt6589, a base product number of the product. The product is designated with the ear99 code number.

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Multiple Devices 30/Jun/2006(PCN Obsolescence/ EOL)
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MMBT6589T1(Datasheets)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)

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