Transistor Type:
NPN
Dimensions:
7.8 x 3 x 11.1mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
40 W
Maximum Collector Base Voltage:
80 V dc
Maximum Collector Emitter Voltage:
80 V dc
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
5 V dc
Package Type:
TO-225
Number of Elements per Chip:
1
Maximum DC Collector Current:
4 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
4 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
60 V
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-225AA, TO-126-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
750 @ 1.5A, 3V
Frequency - Transition:
-
title:
MJE800G
REACH Status:
REACH Unaffected
Transistor Type:
NPN - Darlington
Vce Saturation (Max) @ Ib, Ic:
2.5V @ 30mA, 1.5A
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
100µA
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-126
Packaging:
Bulk
Power - Max:
40 W
Base Product Number:
MJE800
ECCN:
EAR99
