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This is manufactured by onsemi. The manufacturer part number is KSD261GBU. The maximum collector current includes 500 ma. It is assigned with possible HTSUS value of 8541.21.0095. The maximum collector emitter breakdown voltage of the product is 20 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 (to-226aa) formed leads. Furthermore, 200 @ 100ma, 1v is the minimum DC current gain at given voltage. The 400mv @ 50ma, 500ma is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a npn type. It is shipped in bulk package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. to-92-3 is the supplier device package value. The maximum power of the product is 500 mw. Moreover, it corresponds to ksd261, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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