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This is manufactured by onsemi. The manufacturer part number is KSB811GTA. The maximum collector current includes 1 a. It is assigned with possible HTSUS value of 8541.21.0075. The maximum collector emitter breakdown voltage of the product is 25 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 short body. Furthermore, 200 @ 100ma, 1v is the minimum DC current gain at given voltage. The transition frequency of the product is 110mhz. The 500mv @ 100ma, 1a is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a pnp type. It is shipped in tape & box (tb) package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. to-92s is the supplier device package value. The maximum power of the product is 350 mw. Moreover, it corresponds to ksb811, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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