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This is manufactured by onsemi. The manufacturer part number is KSB810YTA. The maximum collector current includes 700 ma. It is assigned with possible HTSUS value of 8541.21.0075. The maximum collector emitter breakdown voltage of the product is 25 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 short body. Furthermore, 120 @ 100ma, 1v is the minimum DC current gain at given voltage. The transition frequency of the product is 160mhz. In addition, it is reach unaffected. The transistor is a pnp type. The 400mv @ 70ma, 700ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. to-92s is the supplier device package value. In addition, tape & box (tb) is the available packaging type of the product. The maximum power of the product is 350 mw. Moreover, it corresponds to ksb81, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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