onsemi KSB1151YSTSSTU

KSB1151YSTSSTU onsemi
onsemi

Product Information

Current - Collector (Ic) (Max):
5 A
HTSUS:
8541.29.0095
Voltage - Collector Emitter Breakdown (Max):
60 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-225AA, TO-126-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
160 @ 2A, 1V
Frequency - Transition:
-
REACH Status:
REACH Unaffected
edacadModel:
KSB1151YSTSSTU Models
edacadModelUrl:
/en/models/1052011
Transistor Type:
PNP
Vce Saturation (Max) @ Ib, Ic:
300mV @ 200mA, 2A
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
10µA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-126-3
Packaging:
Tube
Power - Max:
1.3 W
Base Product Number:
KSB11
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is KSB1151YSTSSTU. The maximum collector current includes 5 a. It is assigned with possible HTSUS value of 8541.29.0095. The maximum collector emitter breakdown voltage of the product is 60 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-225aa, to-126-3. Furthermore, 160 @ 2a, 1v is the minimum DC current gain at given voltage. In addition, it is reach unaffected. The transistor is a pnp type. The 300mv @ 200ma, 2a is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 10µa (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. to-126-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 1.3 w. Moreover, it corresponds to ksb11, a base product number of the product. The product is designated with the ear99 code number.

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KSB1151(Datasheets)
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onsemi RoHS(Environmental Information)

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