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This is manufactured by onsemi. The manufacturer part number is KSB1116GTA. The maximum collector current includes 1 a. It is assigned with possible HTSUS value of 8541.21.0075. The maximum collector emitter breakdown voltage of the product is 50 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 (to-226aa) formed leads. Furthermore, 200 @ 100ma, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 120mhz. In addition, it is reach unaffected. The transistor is a pnp type. The 300mv @ 50ma, 1a is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. to-92-3 is the supplier device package value. In addition, tape & box (tb) is the available packaging type of the product. The maximum power of the product is 750 mw. Moreover, it corresponds to ksb11, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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