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This is manufactured by onsemi. The manufacturer part number is FJP5200RTU. The maximum collector current includes 17 a. It is assigned with possible HTSUS value of 8541.29.0075. The maximum collector emitter breakdown voltage of the product is 250 v. The product has -50°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. Furthermore, 55 @ 1a, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 30mhz. The 3v @ 800ma, 8a is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a npn type. It is shipped in tube package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 5µa (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. to-220-3 is the supplier device package value. The maximum power of the product is 80 w. Moreover, it corresponds to fjp520, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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