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This is manufactured by onsemi. The manufacturer part number is FJN3314RTA. Resistor - Base - 4.7 kohms. It is assigned with possible HTSUS value of 8541.21.0075. The maximum collector current includes 100 ma. The maximum collector emitter breakdown voltage of the product is 50 v. Resistor - Emittor Base (R2) - 47 kohms. Moreover, the product comes in to-226-3, to-92-3 (to-226aa) formed leads. Furthermore, 68 @ 5ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 250 mhz. In addition, it is reach unaffected. The onsemi's product offers user-desired applications. The transistor is a npn - pre-biased type. The 300mv @ 500µa, 10ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. to-92-3 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The maximum power of the product is 300 mw. Moreover, it corresponds to fjn331, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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