Transistor Type:
PNP
Dimensions:
10.53 x 4.83 x 9.28mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
90 W
Maximum Collector Emitter Voltage:
80 V dc
Maximum Emitter Base Voltage:
5 V dc
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
10 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
80 V
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
15 @ 4A, 2V
edacadModel:
BD810G Models
Frequency - Transition:
1.5MHz
Vce Saturation (Max) @ Ib, Ic:
1.1V @ 300mA, 3A
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/1476189
Transistor Type:
PNP
Package:
Tube
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
1mA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220
Power - Max:
90 W
Base Product Number:
BD810
ECCN:
EAR99
