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This is manufactured by onsemi. The manufacturer part number is BD677G. The transistor is a npn type. The given dimensions of the product include 7.8 x 3 x 11.1mm. The product is available in through hole configuration. Provides up to 40 w maximum power dissipation. Whereas features a 60 v dc of collector emitter voltage (max). It features a 5 v dc of maximum emitter base voltage. The package is a sort of to-225. It consists of 1 elements per chip. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 4 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 60 v. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-225aa, to-126-3. Furthermore, 750 @ 1.5a, 3v is the minimum DC current gain at given voltage. The 2.5v @ 30ma, 1.5a is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a npn - darlington type. It is shipped in bulk package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 500µa is the maximum current at collector cutoff. to-126 is the supplier device package value. The maximum power of the product is 40 w. Moreover, it corresponds to bd677, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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