onsemi 2SD1060R-1E

2SD1060R-1E onsemi
2SD1060R-1E
onsemi

Product Information

Current - Collector (Ic) (Max):
5 A
HTSUS:
8541.29.0075
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
50 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 1A, 2V
Frequency - Transition:
30MHz
REACH Status:
REACH Unaffected
edacadModel:
2SD1060R-1E Models
edacadModelUrl:
/en/models/4847479
Transistor Type:
NPN
Vce Saturation (Max) @ Ib, Ic:
300mV @ 300mA, 3A
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
100µA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220-3
Packaging:
Tube
Power - Max:
1.75 W
Base Product Number:
2SD1060
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is 2SD1060R-1E. The maximum collector current includes 5 a. It is assigned with possible HTSUS value of 8541.29.0075. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 50 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. Furthermore, 100 @ 1a, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 30mhz. In addition, it is reach unaffected. The transistor is a npn type. The 300mv @ 300ma, 3a is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 100µa (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. to-220-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 1.75 w. Moreover, it corresponds to 2sd1060, a base product number of the product. The product is designated with the ear99 code number.

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onsemi RoHS(Environmental Information)
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Mult Dev Assembly/Mold Chg 20/Mar/2019(PCN Assembly/Origin)
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Mult Dev EOL 29/Jan/2021(PCN Obsolescence/ EOL)
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2SD1060(Datasheets)

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