Transistor Type:
NPN
Dimensions:
6.5 x 2.3 x 5.5mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
15 W
Maximum Collector Emitter Voltage:
100 V
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
6 V
Package Type:
TP
Number of Elements per Chip:
1
Maximum DC Collector Current:
8 A
Maximum Collector Base Voltage:
100 V
Pin Count:
3 + Tab
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
8 A
HTSUS:
8541.29.0075
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
50 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 500mA, 2V
edacadModel:
2SC5707-E Models
Frequency - Transition:
330MHz
Vce Saturation (Max) @ Ib, Ic:
240mV @ 175mA, 3.5A
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/2797034
Transistor Type:
NPN
Package:
Bag
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TP
Power - Max:
1 W
Base Product Number:
2SC5707
ECCN:
EAR99
