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This is manufactured by onsemi. The manufacturer part number is 2SB817C-1E. The maximum collector current includes 12 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 140 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-3p-3, sc-65-3. Furthermore, 100 @ 1a, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 10mhz. The 2v @ 500ma, 5a is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a pnp type. It is shipped in tube package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 100µa (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. to-3p-3l is the supplier device package value. The maximum power of the product is 120 w. Moreover, it corresponds to 2sb817, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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