onsemi 2SB1201T-E

2SB1201T-E onsemi
onsemi

Product Information

Current - Collector (Ic) (Max):
2 A
HTSUS:
8541.21.0075
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
50 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 100mA, 2V
edacadModel:
2SB1201T-E Models
Frequency - Transition:
150MHz
Vce Saturation (Max) @ Ib, Ic:
700mV @ 50mA, 1A
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/3536044
Transistor Type:
PNP
Package:
Bulk
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TP
Power - Max:
800 mW
Base Product Number:
2SB1201
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is 2SB1201T-E. The maximum collector current includes 2 a. It is assigned with possible HTSUS value of 8541.21.0075. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 50 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-251-3 short leads, ipak, to-251aa. Furthermore, 200 @ 100ma, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 150mhz. The 700mv @ 50ma, 1a is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a pnp type. It is shipped in bulk package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. tp is the supplier device package value. The maximum power of the product is 800 mw. Moreover, it corresponds to 2sb1201, a base product number of the product. The product is designated with the ear99 code number.

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2SB1201/2SD1801(Datasheets)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)

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FAQs

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