onsemi 2N6518BU

2N6518BU onsemi
onsemi

Product Information

Current - Collector (Ic) (Max):
500 mA
HTSUS:
8541.21.0075
Voltage - Collector Emitter Breakdown (Max):
250 V
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
DC Current Gain (hFE) (Min) @ Ic, Vce:
45 @ 50mA, 10V
Frequency - Transition:
200MHz
REACH Status:
REACH Unaffected
edacadModel:
2N6518BU Models
edacadModelUrl:
/en/models/976858
Transistor Type:
PNP
Vce Saturation (Max) @ Ib, Ic:
1V @ 5mA, 50mA
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
50nA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92-3
Packaging:
Bulk
Power - Max:
625 mW
Base Product Number:
2N6518
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is 2N6518BU. The maximum collector current includes 500 ma. It is assigned with possible HTSUS value of 8541.21.0075. The maximum collector emitter breakdown voltage of the product is 250 v. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 (to-226aa). Furthermore, 45 @ 50ma, 10v is the minimum DC current gain at given voltage. The transition frequency of the product is 200mhz. In addition, it is reach unaffected. The transistor is a pnp type. The 1v @ 5ma, 50ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 50na (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. to-92-3 is the supplier device package value. In addition, bulk is the available packaging type of the product. The maximum power of the product is 625 mw. Moreover, it corresponds to 2n6518, a base product number of the product. The product is designated with the ear99 code number.

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2N6518(Datasheets)
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Copper Lead Frame 12/Oct/2007(PCN Design/Specification)
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onsemi RoHS(Environmental Information)

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