onsemi 2N6517CBU

2N6517CBU onsemi
onsemi

Product Information

Current - Collector (Ic) (Max):
500 mA
HTSUS:
8541.21.0075
Voltage - Collector Emitter Breakdown (Max):
400 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 50mA, 10V
edacadModel:
2N6517CBU Models
Frequency - Transition:
200MHz
Vce Saturation (Max) @ Ib, Ic:
1V @ 5mA, 50mA
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/975306
Transistor Type:
NPN
Package:
Bulk
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
50nA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92-3
Power - Max:
625 mW
Base Product Number:
2N6517
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is 2N6517CBU. The maximum collector current includes 500 ma. It is assigned with possible HTSUS value of 8541.21.0075. The maximum collector emitter breakdown voltage of the product is 400 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 (to-226aa). Furthermore, 20 @ 50ma, 10v is the minimum DC current gain at given voltage. The transition frequency of the product is 200mhz. The 1v @ 5ma, 50ma is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a npn type. It is shipped in bulk package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 50na (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. to-92-3 is the supplier device package value. The maximum power of the product is 625 mw. Moreover, it corresponds to 2n6517, a base product number of the product. The product is designated with the ear99 code number.

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2N6515,17,20(Datasheets)
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Copper Lead Frame 12/Oct/2007(PCN Design/Specification)
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onsemi RoHS(Environmental Information)

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