onsemi 2N6426G

2N6426G onsemi
onsemi

Product Information

Current - Collector (Ic) (Max):
500 mA
HTSUS:
8541.21.0095
Voltage - Collector Emitter Breakdown (Max):
40 V
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 Long Body
DC Current Gain (hFE) (Min) @ Ic, Vce:
30000 @ 100mA, 5V
Frequency - Transition:
-
REACH Status:
REACH Unaffected
edacadModel:
2N6426G Models
edacadModelUrl:
/en/models/918283
Transistor Type:
NPN - Darlington
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 500µA, 500mA
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
1µA
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92 (TO-226)
Packaging:
Bulk
Power - Max:
625 mW
Base Product Number:
2N6426
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is 2N6426G. The maximum collector current includes 500 ma. It is assigned with possible HTSUS value of 8541.21.0095. The maximum collector emitter breakdown voltage of the product is 40 v. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 long body. Furthermore, 30000 @ 100ma, 5v is the minimum DC current gain at given voltage. In addition, it is reach unaffected. The transistor is a npn - darlington type. The 1.5v @ 500µa, 500ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 1µa is the maximum current at collector cutoff. The product is available in through hole configuration. to-92 (to-226) is the supplier device package value. In addition, bulk is the available packaging type of the product. The maximum power of the product is 625 mw. Moreover, it corresponds to 2n6426, a base product number of the product. The product is designated with the ear99 code number.

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Multiple Devices 08/Nov/2014(PCN Obsolescence/ EOL)
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Multiple Devices Revision 26/Nov/2014(PCN Obsolescence/ EOL)
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2N6426, 2N6427(Datasheets)
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onsemi RoHS(Environmental Information)

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