onsemi 2N5962

2N5962 onsemi
onsemi

Product Information

Current - Collector (Ic) (Max):
100 mA
HTSUS:
8541.21.0095
Voltage - Collector Emitter Breakdown (Max):
45 V
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
DC Current Gain (hFE) (Min) @ Ic, Vce:
600 @ 10mA, 5V
Frequency - Transition:
-
REACH Status:
REACH Unaffected
edacadModel:
2N5962 Models
edacadModelUrl:
/en/models/979394
Transistor Type:
NPN
Vce Saturation (Max) @ Ib, Ic:
200mV @ 500µA, 10mA
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
2nA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92-3
Packaging:
Bulk
Power - Max:
625 mW
Base Product Number:
2N5962
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is 2N5962. The maximum collector current includes 100 ma. It is assigned with possible HTSUS value of 8541.21.0095. The maximum collector emitter breakdown voltage of the product is 45 v. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 (to-226aa). Furthermore, 600 @ 10ma, 5v is the minimum DC current gain at given voltage. In addition, it is reach unaffected. The transistor is a npn type. The 200mv @ 500µa, 10ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 2na (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. to-92-3 is the supplier device package value. In addition, bulk is the available packaging type of the product. The maximum power of the product is 625 mw. Moreover, it corresponds to 2n5962, a base product number of the product. The product is designated with the ear99 code number.

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Multiple Devices 14/Mar/2011(PCN Obsolescence/ EOL)
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2N5962, MMBT5962(Datasheets)
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onsemi RoHS(Environmental Information)

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