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This is manufactured by onsemi. The manufacturer part number is 2N5883G. The maximum collector current includes 25 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 60 v. The product has -65°c ~ 200°c (tj) operating temperature range. Moreover, the product comes in to-204aa, to-3. Furthermore, 20 @ 10a, 4v is the minimum DC current gain at given voltage. The transition frequency of the product is 4mhz. In addition, it is reach unaffected. The transistor is a pnp type. The 4v @ 6.25a, 25a is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 2ma is the maximum current at collector cutoff. The product is available in through hole configuration. to-204 (to-3) is the supplier device package value. In addition, tray is the available packaging type of the product. The maximum power of the product is 200 w. Moreover, it corresponds to 2n5883, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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