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This is manufactured by onsemi. The manufacturer part number is 2N5830. The maximum collector current includes 200 ma. It is assigned with possible HTSUS value of 8541.21.0095. The maximum collector emitter breakdown voltage of the product is 100 v. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 (to-226aa). Furthermore, 80 @ 10ma, 5v is the minimum DC current gain at given voltage. The 250mv @ 5ma, 50ma is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a npn type. It is shipped in bulk package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 50na (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. to-92-3 is the supplier device package value. The maximum power of the product is 625 mw. Moreover, it corresponds to 2n5830, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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