onsemi 2N5655G

2N5655G onsemi
onsemi

Product Information

Current - Collector (Ic) (Max):
500 mA
HTSUS:
8541.29.0095
Voltage - Collector Emitter Breakdown (Max):
250 V
Operating Temperature:
-65°C ~ 150°C (TJ)
Package / Case:
TO-225AA, TO-126-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 100mA, 10mV
edacadModel:
2N5655G Models
Frequency - Transition:
10MHz
Vce Saturation (Max) @ Ib, Ic:
10V @ 100mA, 500mA
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/918242
Transistor Type:
NPN
Package:
Bulk
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
100µA
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-126
Power - Max:
20 W
Base Product Number:
2N5655
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is 2N5655G. The maximum collector current includes 500 ma. It is assigned with possible HTSUS value of 8541.29.0095. The maximum collector emitter breakdown voltage of the product is 250 v. The product has -65°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-225aa, to-126-3. Furthermore, 30 @ 100ma, 10mv is the minimum DC current gain at given voltage. The transition frequency of the product is 10mhz. The 10v @ 100ma, 500ma is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a npn type. It is shipped in bulk package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 100µa is the maximum current at collector cutoff. The product is available in through hole configuration. to-126 is the supplier device package value. The maximum power of the product is 20 w. Moreover, it corresponds to 2n5655, a base product number of the product. The product is designated with the ear99 code number.

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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)
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Assembly/Test Site Transfer 28/Jul/2016(PCN Assembly/Origin)
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Mult Dev EOL 22/Dec/2017(PCN Obsolescence/ EOL)
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2N5655G, 5657G(Datasheets)

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FAQs

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