onsemi 2N5551_J18Z

2N5551_J18Z onsemi
onsemi

Product Information

Current - Collector (Ic) (Max):
600 mA
HTSUS:
8541.21.0075
Voltage - Collector Emitter Breakdown (Max):
160 V
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 10mA, 5V
Frequency - Transition:
100MHz
Vce Saturation (Max) @ Ib, Ic:
200mV @ 5mA, 50mA
REACH Status:
REACH Unaffected
Transistor Type:
NPN
Package:
Bulk
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
50nA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92-3
Power - Max:
625 mW
Base Product Number:
2N5551
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is 2N5551_J18Z. The maximum collector current includes 600 ma. It is assigned with possible HTSUS value of 8541.21.0075. The maximum collector emitter breakdown voltage of the product is 160 v. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 (to-226aa). Furthermore, 80 @ 10ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 100mhz. The 200mv @ 5ma, 50ma is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a npn type. It is shipped in bulk package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 50na (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. to-92-3 is the supplier device package value. The maximum power of the product is 625 mw. Moreover, it corresponds to 2n5551, a base product number of the product. The product is designated with the ear99 code number.

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2N5551, MMBT5551(Datasheets)
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onsemi RoHS(Environmental Information)

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