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This is manufactured by onsemi. The manufacturer part number is 2N5551RL1G. The maximum collector current includes 600 ma. It is assigned with possible HTSUS value of 8541.21.0075. The maximum collector emitter breakdown voltage of the product is 160 v. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 long body, formed leads. Furthermore, 80 @ 10ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 300mhz. In addition, it is reach unaffected. The transistor is a npn type. The 200mv @ 5ma, 50ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 50na (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. to-92 (to-226) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 625 mw. Moreover, it corresponds to 2n5551, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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